Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing

  • Cheon, Chae-Il (Dept. of materials Sci, & Eng., Hoseo University) ;
  • Lee, Bong-Yeon (Dept. of materials Sci, & Eng., Hoseo University) ;
  • Kim, Jeong-Seog (Dept. of materials Sci, & Eng., Hoseo University) ;
  • Bang, Kyu-Seok (Electronic Components Research Center, Korea Electronics Technology Institute) ;
  • Kim, Jun-Chul (Electronic Components Research Center, Korea Electronics Technology Institute) ;
  • Lee, Hyeung-Gyu (Electronic Components Research Center, Korea Electronics Technology Institute)
  • Published : 2003.04.01
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Abstract

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

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References

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