The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Influence of DCS Post flow on the Properties of $\textrm{WSi}_{x}$ Thin films

DCS Post Flow가 $\textrm{WSi}_{x}$ 박막 특성에 미치는 영향

  • Published : 2003.04.01
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Abstract

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

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References

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