대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
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화학수송법으로 성장한 $Cd_4GeSe_{6}$ 및 $Cd_{4}GeSe_{6}$ : $CO^{2+}$ 단결정에서 에너지 띠 간격의 온도의존성 및 열역학함수 추정

Temperature Dependence of Energy Gap and Thermodynamic Function Properties of Undoped and Co-doped $Cd_{4}GeSe_{6}$ Sing1e Crystals by Chemical Transport Reaction Method

  • 발행 : 2003.02.01
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초록

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

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참고문헌

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