ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Excimer Laser-Assisted In Situ Phosphorus Doped $Si_{(1-x)}Ge_x$ Epilayer Activation

  • Bae, Ji-Cheul (Institute of Basic Science, Changwon National University) ;
  • Lee, Young-Jae (Department of Electronics Engineering, Dongeui University)
  • Received : 2002.10.28
  • Published : 2003.06.30
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Abstract

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

Keywords

References

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