산 증식형 포토레지스트로 Poly($MTC_{10}-co-tBMA_{90}$)의 합성 및 특성 연구

Poly[(1-methacryloyloxy-4-tosyloxycyclohexane)-co-(tert-butyl methacrylate)] as an acid amplifying photoresist

  • 권경아 (부경대학교 공과대학 화상정보공학부) ;
  • 이은주 (부경대학교 공과대학 화상정보공학부) ;
  • 임권택 (부경대학교 공과대학 화상정보공학부) ;
  • 정용석 (부경대학교 공과대학 화상정보공학부) ;
  • 정연태 (부경대학교 공과대학 화상정보공학부)
  • Kuen, Kyoung-A (Division of Image and Information Engineering, Pukyong National University) ;
  • Lee, Eun-Ju (Division of Image and Information Engineering, Pukyong National University) ;
  • Lim, Kwon-Taek (Division of Image and Information Engineering, Pukyong National University) ;
  • Jeong, Yong-Seok (Division of Image and Information Engineering, Pukyong National University) ;
  • Jeong, Yeon-Tae (Division of Image and Information Engineering, Pukyong National University)
  • 발행 : 2002.10.01

초록

Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

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