Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 1 Issue 1
- /
- Pages.9-13
- /
- 2002
- /
- 1738-2270(pISSN)
Fabrication of 8 inch Polyimide-type Electrostatic Chuck
폴리이미드형 8인치 정전기척의 제조
Abstract
A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.
Keywords
- Polyimide;
- Electrostatic Chuck (ESC);
- Dry etcher;
- Semiconductor processing;
- Chucking force;
- Silicon wafer;
- Unipolar-type ESC