JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Optimum Design of the Interdigitated CB Structure

  • qiang, Yang-Hong (Institute of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China) ;
  • bi, Chen-Xing (Institute of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China)
  • Published : 2002.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

Some measures are provided for the optimum design of specific on-resistance $R_{on}$ and breakdown-voltage $V_B$ of interdigitated CB (Composite Buffer) MOSFET, including introducing opposite type impurity into the P region near the $N_＋$contact, separating P region from N region with an oxide film, and a groove in the N region near the $P_＋$ contact. The new relationship between the $R_{on}$ and $V_B$, which proved by numerical device simulation, are more exact and minute than the qualitative results before.

Keywords

References

  1. L. Lorentz, G. Deboy, A. Knapp and M. Marz, 'COOLMOS-a new milestone in high voltage power MOS,' Proc. of 11th ISPID(IEEE), pp. 3-10, 1999 https://doi.org/10.1109/ISPSD.1999.764028
  2. G. Deboy, et al., 'A new generation of high voltage MOSFET's breaks the limit line of silicon,' Proc. IEDM I998, pp.683-686, 1998 https://doi.org/10.1109/IEDM.1998.746448
  3. X. B. Chen, 'Theory of a novel voltage sustaining (CB) layer for power devices,' Chinese Journal of Electronics, Vol.7, No.3, pp. 211-216, 1998
  4. CHEN Xingbi, 'Optimum design parameters for different patterns of CB-structure,' Chinese Journal of Electronics, vol. 9, No. 1, Jan. 2000
  5. Xing-Bi Chen, 'Optimization of the Specific On-Resistance of the COOLMOS,' IEEE Trans. Electron Devices, vol. 48, No. 2, Feb. 2001 https://doi.org/10.1109/16.902737
  6. X. B. Chen, 'Semiconductor power devices with alternating conductivity type high-voltage breakdown regions,' U.S. Patent 5, 216, 275, 1993; Also, Chinese invent Patent: ZL 1 01845.X,1993
  7. TMA/MEDICI User's Manual, Version 2.1.2 TMA, Inc., 1994