Journal of Korean Vacuum Science & Technology
- 제6권1호
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- Pages.46-50
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- 2002
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- 1226-6167(pISSN)
Study in Mechanism of Hydrogen Retention by C-SiC Films with IR
- Huang, N.K. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
- Xiong, Q. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
- Liu, Y.G. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
- Yang, B. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University) ;
- Wang, D.Z. (Key Laboratory for Radiation Physics and Technology of Education Ministry of China Institute of Nuclear Science and Technology, Sichuan University)
- 발행 : 2002.06.01
초록
C-SiC films with different content of SiC on stainless steel substrate were prepared with ion beam mixing. It was found that hydrogen concentrations in C-SiC coatings was higher than that in stainless steel after H
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