Depth Distributions of $Bi^{+}$ Ions Implanted into Ni, Si and $SiO_2$, Films

Ni, Si and $SiO_2$ films were implanted by 350 keV B $i_{+}$ ions at room temperature with fluences of 1$\times$10$^{16}$ and 2$\times$10$^{16}$ ions/c $m^2$ The depth distributions of implanted B $i^{+}$ ions in Ni, Si and $SiO_2$ films were by investigated by Rutherford backscattering. The results show that the depth distributions of implanted B $i^{+}$ ions into Ni, Si and $SiO_2$ films have obeyed nearly Gaussian distributions. The maximum difference between experimental and calculated values is less than 18 % for mean projected range. Experimental range straggling deviated significantly from calculated value. The possible reasons are discussed.sed.d.