Journal of Magnetics

  • 제7권1호
  • /
  • Pages.4-8
  • /
  • 2002
  • /
  • 1226-1750(pISSN)
  • /
  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
권호 표지
DOI QR코드

DOI QR Code

Spin Transport in a Ferromagnet/Semiconductor/Ferromagnet Structure: a Spin Transistor

  • Lee, W.Y (Nano Device Research Center, Korea Institute of Science and Technology) ;
  • Bland, J.A.C (Cavendish Laboratory, University of Cambridge)
  • 발행 : 2002.03.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

키워드

참고문헌

  1. IEEE Spectrum v.38 G. Zorpette
  2. Science v.294 S. A. Wolf;D. D. Awschalom;R. A. Buhrman;J. M. Daughton;S. von Molnar;M. L. Roukes;A. Y. Chtchelkanova;D. M. Treger https://doi.org/10.1126/science.1065389
  3. Appl. Phys. Lett. v.56 S. Datta;B. Das https://doi.org/10.1063/1.102730
  4. Phys. Rev. lett. v.70 M. Johnson https://doi.org/10.1103/PhysRevLett.70.2142
  5. J. Mag. Mag. Mater. v.140 no.144 M. Johnson https://doi.org/10.1103/PhysRevLett.70.2142
  6. J. Mag. Mag. Mater. v.165 A. Fert;S. F. Lee https://doi.org/10.1016/S0304-8853(96)00484-2
  7. Science v.250 G. A. Prinz https://doi.org/10.1126/science.250.4984.1092
  8. Phys. Rev. Lett. v.78 J. Nitta;T. Akazaki;H. Takayanagi;T. Enoki https://doi.org/10.1103/PhysRevLett.78.1335
  9. Phys. Rev. Lett. v.83 P. R. Hammar;B. R. Bennett;M. J. Yang;M. Johnson https://doi.org/10.1103/PhysRevLett.83.203
  10. Phys. rev. Lett. v.84 F. G. Monzon;H. X. Tang;M. L. Roukes https://doi.org/10.1103/PhysRevLett.84.5022
  11. Phys. Rev. Lett. v.84 B. J. van Wees https://doi.org/10.1103/PhysRevLett.84.5023
  12. Phys. Rev. v.B62 G. Schidt;D. Ferrand;L. W. Mollenkamp;A. T. Filip;B. J. van Wees https://doi.org/10.1103/PhysRevLett.84.5023
  13. Semic. Sci. Techn. v.13 C. Gatzke;S. J. Webb;K. Fobelets;R. A. Stradling https://doi.org/10.1088/0268-1242/13/4/008
  14. Jpn. J. Appl. Phys. Pt2-Lwtters v.30 H. Oigawa;J. F. Fan;Y. Nannichi;H. Sugahara;M. Oshima https://doi.org/10.1143/JJAP.30.L322
  15. J. Appl. Phys. v.87 W. Y. Lee;C. C. Yao;a. Hirohata;Y. B. Xu;H. T. Leung;s. M. Gradiner;S. McPhail;B. C. Choi;D. G. Hasko;J. A. C. Bland https://doi.org/10.1063/1.372295
  16. Appl. Phys. Lett. v.70 A. O. Adeyeye;G. Lauhoff;J. A. C. Bland;C. Daboo;D. G. Hasko;H. Anmed https://doi.org/10.1063/1.118438
  17. Appl. Phys. Lett. v.71 K. J. Kirk;J. N. chapman;C. D. W. Wilkinson https://doi.org/10.1063/1.119602
  18. Appl. Phys. Lett. v.74 J. Shi;s. Tehrani;T. Zhu;Y. F. Zheng;J. G. Zhu https://doi.org/10.1063/1.123887
  19. Phys. Rev. v.B47 G.L. Chen;J. Han;S. Data;D. B. Janes https://doi.org/10.1063/1.123887
  20. Physica E;Low-dimensional systems and nano-structures v.6 S. Gardelis;C. G. Smith;W. Y. Lee;E. H. Linfield;J. A. C. Bland https://doi.org/10.1016/S1386-9477(99)00180-0
  21. Phys. Soild States v.2 E. I. Rashba https://doi.org/10.1016/S1386-9477(99)00180-0
  22. E. I. Rashba, Sov. Phys. Solid States 2, 1109 (1960)

피인용 문헌

  1. Magnetic properties of spin valves having extremely thin underlayers vol.4, pp.12, 2007, https://doi.org/10.1002/pssc.200777223