한국재료학회지 (Korean Journal of Materials Research)

  • 제12권1호
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  • Pages.54-57
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  • 2002
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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InxGa1-xN/GaN 박막의 광학적 특성

Optical properties of InxGa1-xN/GaN epilayers

  • Jun, Yong-Ki (Department of Liberal Art and Science, Howon University) ;
  • Chung, Sang-Jo (Applied Technology Corporation, R & D Center)
  • 발행 : 2002.01.01
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초록

We have grown undoped $In_ xGa_{1-x}N,\; In_xGa_{1-x}N:Si\;and\;In_{0.1}Ga_{0.9}N:Zn$ thin films by MOCVD at temperature between 880 and $710^{\circ}C which endows various In composition in the epilayer from 0.07 to 0.22 as examined using X-ray diffraction, optical absorption(OA), photocurrent (PC) and photoluminescence (PL). The In molar fraction estimated from PL results is higher than that from the OA, PC, and X-ray data for $X{\le}0.22$, which may be caused by phase separation. However, the In molar fraction estimated by X-ray diffraction, OA, PC and PL for $In_xGa_{1-x}N:Si$ does not show discrepancy. With the appropriate Zn doping in undoped $In_{0.1}Ga_{0.9}N$, the emission peak is shifted from 3.15 eV which originates from the band edge emission peak to 2.65 eV which resulted from the conduction band to acceptor transition due to a deep acceptor level.

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