참고문헌
- 전기전자재료학회논문지 v.14 no.2 n+ GaN/AlGaN/GaN HFET 제작을 위한 오믹접촉에 관한 연구 정두찬;이재승;이정희;김창석;오재용;김종욱;신진호;신무환
- 전기전자재료학회논문지 v.14 no.9 GaN 소자의 쇼트키 특성 향상에 관한 연구 윤진섭
- Appl. Phys. Lett. v.68 no.21 Hall measurements and contact resistance in doped GaN/AlGaN heterostructures M. A. Khan;M. S. Shur;Q. Chen https://doi.org/10.1063/1.116684
- J. Cryst. Growth v.189/190 Theory of doping and defects in Ⅲ V Nitrides C. G. Van de Walle;C. Stampfle;J. Neugebauer https://doi.org/10.1016/S0022-0248(98)00340-6
- Trans. on EEM v.2 no.4 The Mg solid solution for the P type activation of GaN thin films grown by metal organic chemical vapor deposition K. J. Kim;S. J. Chung
- Appl. Phys. Lett. v.68 no.10 Deep levels in the upper band gap region of lightly Mg doped GaN P. Hacke;H. Nakayma;T. Detchprohm;K. Hiramatsu;N. Sawaki https://doi.org/10.1063/1.116080
- Appl. Phys. Lett. v.72 no.11 Nature of the 2.8 eV photoluminescence band in Mg doped GaN U. Kaufmann;M. Kunzer;M. Maier;H. Obloh;A. Ramakrishnan;B. Santic;P. Schlotter https://doi.org/10.1063/1.120983
- Appl. Phys. Lett. v.76 no.25 Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN L. C. Chen;J. K. Ho;C. S. Jong;C. C. Chiu;K. K. Shih;F. R. Chen;J. J. Kai;L. Chang https://doi.org/10.1063/1.126755
- J. Appl. Phys v.86 no.8 Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films J. K. Ho;C. S. Jong;C. C. Chiu;C. N. Huang;K. K. Shih;L. C. Chen;F. R. Chen;J. J. Kai https://doi.org/10.1063/1.371392
- Appl. Phys. Lett. v.78 no.2 Electrical properties of p-type:Mg codoped with oxygen R. Y. Korotkov;J. M. Gregie;B. W. Wessels https://doi.org/10.1063/1.1335542
- Jpn. J. Appl. Phys. v.36 Material design for the fabrication of low-resistivity p-GaN using a codoping method T. Yamamoto;H. K. Yoshida https://doi.org/10.1143/JJAP.36.L180
- Appl. Phys. Lett. v.69 no.18 High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant O. Brandt;H. Yang;H. Kostial;K. H. Ploog https://doi.org/10.1063/1.117685
- The Blue Laser Diode-GaN Based Light Emitter and Lasers S. Nakamura;G. Fasol
- Semicond. Sci. Technol. v.14 Atomic model for blue luminescence in Mg-doped GaN S. G. Lee;K. J. Chang https://doi.org/10.1088/0268-1242/14/2/006
- Appl. Phys. Lett. v.76 no.16 Influence of oxygen on the activation of p-type GaN B. A. Hull;S. E. Mohney;H. S. Venugopalan;J. C. Ramer https://doi.org/10.1063/1.126318