Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

  • Published : 2002.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

Keywords

References

  1. M. H. M. Zai, A. Akiba, H. Goto, M. Matsumoto, and E. M. Yeatman, 'Highly (111) oriented lead zirconate titanate thin films deposited using a non-polymeric route', Thin Solid Films, Vol. 394, p. 96, 2001 https://doi.org/10.1016/S0040-6090(01)01136-1
  2. N. Wakiya, K. Kuroyanagi, Y. Xuan, K. Shinozaki, and N. Mizutani, 'An XPS study of the nucleation and growth behavior of an epitaxial $Pb(Zr,Ti)C_3/MgO(100)$ thin film prepared by MOCVD', Thin Solid Films, Vol. 372, p. 156, 2000 https://doi.org/10.1016/S0040-6090(00)01013-0
  3. C. H. Lin, W. D. Hsu, and I. N. Lin, 'Ferroelectric properties of $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films prepared by metal-organic decomposition process', Applied Surface Science, Vol.142, p.418, 1999 https://doi.org/10.1016/S0169-4332(98)00680-1
  4. T. Minamikawa, Y. Yonezawa, A. Heya, Y. Fujimori, T. Nakamura, A. Masuda, and H. Matsumura, 'Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD', Thin Solid Films, Vol.395, p.284, 2001 https://doi.org/10.1016/S0040-6090(01)01285-8
  5. A. C. Rastogi, S. R. Darvish, and P. K. Bhatnagar, 'Phase evolution of electron-beam evaporated $Pb(Zr,Ti)O_3$ thin films', Materials Chemistry and Physics, Vol.73, p.135, 2002 https://doi.org/10.1016/S0254-0584(01)00383-2
  6. S. Ha, D. Kim, H. Park, and T. Kim, 'Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents', Thin Solid Films, Vol.355-356, p.525, 1999
  7. F. Craciun, P. Verardi, G. Guidarelli, and M. Dinescu, 'Reactive pulsed laser deposition of piezoelectric and ferroelectric thin films', Thin Solid Films, Vol.343-344, p.90, 1999
  8. P. Verardi, M. Dinescu, F. Craciun, and A. Perrone, 'in situ growth of ferroelectric lead zirco-nate-titanate thin films on Si substrates by pulsed Nd:YAG laser deposition', Applied Surface Science, Vol.127-129, p.457, 1998
  9. M. C. Kim, Y. W. Park, D. S. Paik, H. Y. Shin, S. J. Yoon, H. J. Kim, and K. H. Yoon, 'A study on the characteristics of the PZT thin films prepared by pulsed laser deposition', Proc. 1999 Conf. KIEE, p885, 2000
  10. D. S. Paik, M. C. Kim, H. Y. Shin, Y. W. Park, S. J. Yoon, and K. J. Kim, 'Effects of microstructure on ferroelectric properties of PZT thin films prepared by PLD', Proc. 1999 Conf. KIEE, 1, p.224, 1999
  11. C. Doughty, A. T. Findikoglu, and T. Venkatesan, 'Steady state pulsed laser deposition target scanning for improved plume stability and reduced particle density', Appl. Phys. Lett, Vol.66, p.1267, 1995 https://doi.org/10.1063/1.113258
  12. C. V. R. Vasant Kumar, R. Pasual, and M. Sayer, 'Crystallization of sputtered lead zirconate titanate films by rapid thermal processing', J. Appl. Phys., Vol.71, p.864, 1992 https://doi.org/10.1063/1.351307