The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effect of RF Etch Conditions on Metal Contact Resistance

금속 접촉 저항에 대한 RF 식각 조건의 영향

  • 김도우 (하이닉스반도체(주)) ;
  • 정철모 (하이닉스반도체(주)) ;
  • 구경완 (영동대학교 정보전자공학부) ;
  • 왕진석 (충남대학교 정보통신공학부)
  • Published : 2002.04.01
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Abstract

The resistances of metal2 contact to metall and poly Si are checked by various RF etch conditions in terms of pre-cleaning. The changes of resistance are evaluated by statistical analysis method(SAS) for the AC bias power, coil power and RF target. The contact area on poly Si is shown by TEM image and the distributions of contact resistance according to ar etch target and RTP are investigated. The RTP groups have larger variations than normal RF etch targets. When the RF etch target becomes lower and coil power becomes higher, the resistances of metal2 contact to metals and poly Si have lower contact resistance. But the condition of AC bias power did not satisfied low meta12 contacts resistance for metall and poly Si simultaneously. The R-square of ststistical analysis was 0.98 for resistances of meta12 contact to poly Si and 0.87 for resistances of meta12 contact to metall.

Keywords

References

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