Etching of Zinc Oxide(ZnO) Using Isomer of Butyl Acetate

부틸아세트산 메틸 이성체에 의한 산화아연(ZnO)의 식각

  • 이봉주 (조선대 자연대 물리화학부) ;
  • 정헌상 (조선대 공과대 전기공학부) ;
  • 이경섭 (동신대학교 전기전자공학부)
  • Published : 2002.03.01

Abstract

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

Keywords

References

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