The Magazine of the IEIE (전자공학회지)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

비휘발성 강유전체 메모리(FeRAM)기술의 현황 및 전개 동향

  • Published : 2002.08.01

⟨ Previous Next ⟩

Abstract

Keywords

References

  1. Nature v.401 Lanthanum-Substituted Bismuth Titanate for Use in Non-volatie Memories B. H. Park;B. S. Kang;S. D. Bu;T. W. Noh;J. Lee;W. Jo
  2. Nikkei Electronics no.810 Develops Elemental Technology Compensating for FeRAM Weaknesses Tokyo Institute Technology
  3. Symp. VLSI Tech. Dig. Tech. Papers A Fully Planalized 8M bit Ferroelectric RAM with Chain Cell Structure T. Ozaki;J. Iba;Y. Yamada;H. Kanaya;T. Morimoto;O. Hidaka;A. Taniguci;Y. Kumura;K. Yamakawa;Y. Oowaki;I. Kunishima
  4. ISSCC Dig. Tech. Papers A 0.25 ㎛ 3.0 V 1T1C 32MB Nonvolatile Ferroelectric RAM with ATD and CFLSA M. K. Choi;B. G. Jeon;N. Jang;B. J. Min;Y. J. Song;S. Y. Lee;H. H. Kim;D. J. Jung;H. J. Joo;K. Kim
  5. J. Solid State Circuits v.37 no.8 A 128-kb FeRAM Macro for Contact/Contactless Smart-Card Microcontrollers J. Yamada;T. Miwa;H. Koike;H. Toyoshima;K. Amanuma;S. Kobayashi;T. Tatsumi;Y. Maejima;H. Hada;H. Mori;S. Takahashi;H. Takeuchi;T. Kunio
  6. J. Solid State Circuits v.36 no.3 NV-SRAM : A Nonvolatile SRAM with Backup Ferroelectric Capacitors T. Miwa;J. Yamada;H. Koike;H. Toyoshima;K. Amanuma;S. Kobayashi;T. Tatsumi;Y. Maejima;H. Hada;T. Kunio
  7. Nikkei Electronics no.813 Rohm Uses Ferroelectric Capacitor to Manufacture a Latch Circuit Prototype
  8. Symp. VLSI Circuit Dig. Tech. Papers (C15-P2) Ferroelectric Memory Based Secure Dynamically Programmable Gate Array S. Masui;T. Ninomiya;M. Oura;W. Yokozeki;K. Mukaida;S. Kawashima
  9. ISSCC Dig. Tech. Papers A Ferroelectric Nonvoaltile Memory S. Sheffield;D. B. Butler;M. Parris;D. Wilson;H. McNeillie
  10. J. Solid State Circuits v.23 An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell J. T. Evans;R. Womack