센서학회지 (Journal of Sensor Science and Technology)

  • 제11권2호
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  • Pages.118-123
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  • 2002
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
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Al2O3 기판위에 증착한 ZnGa2O4 형광체 박막의 산소분압에 따른 형광특성

Photoluminescence Behaviors of the ZnGa2O4 Phosphor Thin Films on Al2O3 substrates as a Function of Oxygen Pressures

  • 이성수 (신라대학교 광전자공학과)
  • 발행 : 2002.03.30
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초록

$ZnGa_2O_4$ 형광체 박막을 기판 온도를 $550^{\circ}C$에 고정시키고 산소 분압을 100, 200, 300 mTorr로 변화시키며 $Al_2O_3$(0001) 기판 위에 펄스 레이저 증착법을 이용하여 증착하였다. 다른 산소 분압에서 성장한 박막들의 미세 결정구조와 형광특성을 조사하였으며, 산소분압이 증가할수록 박막의 결정성이 변화하였으며 박막의 조성비가 다름을 형광특성을 통하여 알 수 있었다. 발광 스펙트럼은 460 nm에서 최고 피크값 을 나타내었으며, 300 nm에서 600 nm까지 갖는 넓은 밴드의 형광 특성을 나타내었다. 최적의 조건에서 성장된 박막의 형광 밝기를 고려해볼 때 $Al_2O_3$(0001) 기관이 우수한 $ZnGa_2O_4$ 형광체 박막을 성장시킬 수 있는 기판들 중 하나임을 확인하였다.

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition technique on $Al_2O_3$(0001) substrates at a substrate temperature of $550^{\circ}C$ with various oxygen pressures 100, 200 and 300 mTorr. The films grown under different growth oxygen pressures have been characterized using microstructural and luminescent measurements. The different photoluminescence (PL) characteristics with the increase in oxygen pressures may result from the change of the crystallinity and the composition ratio of Zn and Ga in the films. The luminescent spectra show a broad band extending from 300 to 600 nm peaking at 460 nm. The PL brightness data obtained from the $ZnGa_2O_4$ films grown under optimized conditions have indicated that the sapphire is a promising substrate for the growth of high quality $ZnGa_2O_4$ thin film phosphor.

키워드

참고문헌

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