JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A High Performance Solenoid-Type MEMS Inductor

  • Seonho Seok (School of Electrical Engineering Seoul National University) ;
  • Chul Nam (School of Electrical Engineering Seoul National University) ;
  • Park, Wonseo (School of Electrical Engineering Seoul National University) ;
  • Kukjin Chun (School of Electrical Engineering Seoul National University)
  • Published : 2001.09.01
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Abstract

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

Keywords

References

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