Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Method for Evaluating the Temperature Coefficient of a Compound Semiconductor Energy Gap by Infrared Imaging Technique

적외선 영상기법에 의한 화합물 반도체 에너지갭의 온도계수 측정 방법

  • Kang, Seong-Jun (Mokpo National University, School of Information Engineering)
  • Published : 2001.05.01
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Abstract

An infrared imaging method in which direct measurement of energy gap variations can be achieved by digital image processing is proposed. This method allows economic and easy evaluation of the temperature coefficients of a semiconductor energy gap. The key components of the method are a polychromator, a computer equipped with a frame grabber and a variable temperature cryostat. Tentative experimentation conducted on LEC grown semi-insulating GaAs has resulted in a fairly good agreement with the theoretical model. This proposed method could be applicable for most compound semiconductors.

온도에 따른 반도체 에너지갭의 변화를 디지털 영상처리를 이용해 직접 측정하는 적외선 영상기법을 제안하고 있다. 본 방법은 반도체 에너지갭의 온도계수를 경제적이고 간단하게 평가할 수 있도록 한다. 본 기법의 핵심 구성 부품은 다색광원기(Polychromator), 프레임 그래버가 내장된 컴퓨터 및 가변 온도 저온유지장치(Cryostat)이다. 방법의 타당성을 검증하기 위해 LEC 방법으로 제조한 GaAs에 시험적으로 행한 실험은 온도 계수가 이론 모델에서 구한 값과 전반적으로 잘 일치함을 보여 주었다.

Keywords

References

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