한국산업정보학회논문지 (Journal of Korea Society of Industrial Information Systems)
- 제6권3호
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- Pages.123-127
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- 2001
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- 1229-3741(pISSN)
고주파통신회로 설계를 위한 CMOS RF 모델 파라미터
The CMOS RF model parameter for high frequency communication circuit design
초록
CMOS 트랜지스터의 등가회로모델 파라미터
The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.
키워드