Deposition of $SiC_xN_y$ Thin Film as a Membrane Application

  • Huh, Sung-Min (Department of Materials Engineering, Hanyang University) ;
  • Park, Chang-Mo (Department of Materials Engineering, Hanyang University) ;
  • Jinho Ahn (Department of Materials Engineering, Hanyang University)
  • 발행 : 2001.03.01

초록

$SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

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