Abstract
Experimental studies of the brittle-ductile transition (BDT) for pre-cracked sapphire single crystals were carried out. The BDT temperature in sapphire single crystals were $1000\pm$$25^{\circ}C$ and 1100$\pm$$25^{\circ}C$ at constant strain rate 3.3$\times$$10^{-5}$/sec and 3.3$\times$$10^{-6}$/sec, respectively. With aid of the BDT model, the activation energy for prism plane slip {1120} <1100> dislocation velocity was in the range of 4.6$\pm$2.3eV This activation energy for dislocation velocity with BDT model was compatible with the result of the dislocation velocity (3.8eV) using the etch-pit techniques.
사파이어 단결정의 취성-연성전이에 대한 실험을 행하였다. 사파이어 단결정의 취성-연성전이온도는 변형율 3.3$\times$ $10^{-5}$/sec에서 $1000\pm$$25^{\circ}C$ 그리고 변형률 3.3$\times$$10^{-5}$/sec에서는 1100$\pm$26$^{\circ}C$이었다. 취성-연성전이모델을 이용하여 Prism Plane slip {1120} <1100> 전위속도의 활성화에너지를 계산하였으며, 그 결과 활성화에너지는 4.6$\pm$2.3eV의 범위를 가졌다. 이 활성화에너지는 에치-퍼트법을 이용하여 전위속도측정으로부터 구한 결과치 3.8eV와 유사하였다.