한국재료학회지 (Korean Journal of Materials Research)

  • 제11권11호
  • /
  • Pages.997-1000
  • /
  • 2001
  • /
  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지

액체 운반 유기 금속 화학 기상 증착법에 의한 $(Ba,Sr)RuO_3$ 하부전극의 특성

Characteristics of (Ba,Sr)RuO$_3$Bottom Electrodes by Liquid Delivery Metalorganic Chemical Vapor Deposition

  • Choe, Eun-Seok (Dept. of Materials Engineering, Chungnam National University) ;
  • Yun, Sun-Gil (Dept. of Materials Engineering, Chungnam National University)
  • 발행 : 2001.11.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

키워드

참고문헌

  1. S.G. Yoon, J.C. Lee and A. Safari, J. Appl. Phys. 76 (5), 2999 (1994) https://doi.org/10.1063/1.357547
  2. S.G. Yoon and A. Safari, Thin Solid Films, 24, 211 (1995) https://doi.org/10.1016/0040-6090(94)06235-D
  3. Q.X. Jia, X.D. Wu, S.R. Foltyn and P. Tiwari, Appl. Phys. Lett, 66 (17), 2197 (1995) https://doi.org/10.1063/1.113945
  4. N. Okuda, K. Saito and H. Funakubo, Jpn. J. Appl. Phys. 39 (2A), 572 (2000) https://doi.org/10.1143/JJAP.39.572
  5. C.M. Chu and P. Lin, Appl. Phys. Lett. 72 (10), 1241 (1998) https://doi.org/10.1063/1.121026
  6. N. Higashi, N. Okuda and H. Funakubo, Jpn. J. Appl. Phys. 39 (5A), 2780 (2000) https://doi.org/10.1143/JJAP.39.2780
  7. H.N. Al-Shareef, B.A. Tuttle, W.L. Warren, D. Dimos, M.V. Raymond and M.A. Rodriguez, Appl. Phys. Lett. 68, 272 (1996) https://doi.org/10.1063/1.115660
  8. D.K. Choi, B.S. Kim, S.Y. Son, S.H. Oh and K.W. Park, J. Appl. Phys. 86 (4), 3347 (1999) https://doi.org/10.1063/1.371212
  9. K.Y. Park, J.H. Park, S.H. Oh, B.S. Kim, Y.C. Chung, D.K. Choi, C.Y. Yoo, Y.W. Park and S.I. Lee, J. Vac. Sci. Technil. B, 19 (1), 281 (2001) https://doi.org/10.1116/1.1333079
  10. D.W. Shaw, Crystal Growth, p. 11, Plenum Press, London, (1974)
  11. W.C. Shin and S.G. Yoon, J. Electrochem. Soc. 144, 1057 (1997) https://doi.org/10.1149/1.1837530