Transactions on Electrical and Electronic Materials
- 제2권4호
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- Pages.15-18
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- 2001
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
A Small Scaling Lateral Trench IGBT with Improved Electrical Characteristics for Smart Power IC
- Moon, Seung Hyun (Department of Electrical Engineering Korea University) ;
- Kang, Ey Goo (Department of Electrical Engineering Korea University) ;
- Sung, Man Young (Department of Electrical Engineering Korea University)
- 발행 : 2001.12.01
초록
A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10