Progress in Superconductivity
- 제3권1호
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- Pages.95-98
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- 2001
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- 1229-4764(pISSN)
초전도 선재의 중간 반응 방지막으로써 Ni 기판위에 제조된 NiO 막의 특성 분석
Fabrication and characterization of nickel oxide films on textured nickel substrate for a superconductor buffer layer
- Park, Eunchul (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
- Inki Hong (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
- Hyunsuk Hwang (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
- Taehyun Sung (Korea Electric Power Research Institute) ;
- Kwangsoo No (Electronic and Optical Materials Laboratory, Dept. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology)
- 발행 : 2001.01.01
초록
Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of