KIPE Magazine (전력전자학회지)

The Korean Institute of Power Electronics (전력전자학회)
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전원의 고밀도화를 위한 Smart Power ASIC의 설계 기술

  • 송근호 (한국전기연구원 전력반도체그룹) ;
  • 김태진 (전력전자그룹) ;
  • 김은동 (한국전기연구원 전력반도체그룹)
  • Published : 2001.10.01
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References

  1. Proc. ISPSD'98 A High Voltage Intelligent Power Module with a High Performance Gate Driver K. Ishii;H. Matsumoto, M.;Takeda, A.;Kawakami;T. Yamada
  2. Proc. ISPSD'98 A Monolithic IGBT Gate Driver Implemented in a Conventional 0.8㎛ BiCMOS process Mehrdad Ramezani;C. Andre;T. Salama
  3. IEEE Trans. Power Electron. v.6 no.2 An investigation of the drive circuit requirements for the power insulated gate bipolar transistor(IGBT) A. R. Hefner
  4. IEEE Trans. Power Electron. v.10 no.3 A New Driving Circuit for IGBT Devices Carmelo Licitra;Salvatore Musumeci;Angelo Raciti;Agostino U. Galluzzo;Romeo Letor;Maurizio Melitol