대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

STI-CMP 공정의 질화막 잔존물 및 패드 산화막 손상에 대한 연구

A Study on the Nitride Residue and Pad Oxide Damage of Shallow Trench Isolation(STI)-Chemical Mechanical Polishing(CMP) Process

  • 발행 : 2001.09.01
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초록

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

키워드

참고문헌

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