Transactions on Electrical and Electronic Materials
- Volume 2 Issue 3
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- Pages.1-6
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- 2001
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
Simulation of Material Properties of Amorphous Carbon Nitride with Non-uniform Nitrogen Distribution
- Lu, Y.F. (Laser Microprocessing Laboratory Department of Electrical Engineering and Data Storage Institute National University of Singapore) ;
- He, Z.F. (Laser Microprocessing Laboratory Department of Electrical Engineering and Data Storage Institute National University of Singapore)
- Published : 2001.09.01
Abstract
A simulation method is proposed to study the amorphous structure of carbon nitride. The material properties of a non-uniform nitrogen distribution in an amorphous CN matrix can be studied. The cohesive energy of a group of randomly generated atoms can be minimized to find the relative positions of atoms. From the calculated configuration of atoms, many properties of amorphous carbon nitride can be calculated such as bulk modulus, P-V curve, sp