한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제38권4호
  • /
  • Pages.365-369
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  • 2001
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  • 1229-7801(pISSN)
  • /
  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
권호 표지

PECVD법에 의한 3C-SiC막 증착(II): Nanoindentation 방법을 이용한 SiC 막의 기계적성질

Deposition of 3C-SiC Films by Plasma-enhanced Chemical Vapor Deposition (II): Mechanical Properties of SiC Films by Nanoindentation Technique

  • 김광호 (부산대학교 무기재료공학과) ;
  • 윤석영 (부산대학교 무기재료공학과) ;
  • 서지윤 (부산대학교 무기재료공학과) ;
  • 김창열 (일본 오오사카대학교) ;
  • 발행 : 2001.04.01
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초록

플라즈마 화학증착법(PECVD)에 의해 실리콘 (100) 기판 위에 3C-SiC막을 증착하였다. 증착반응시 유입가스비, R$_{x}$[=CH$_4$/(CH$_4$+H$_2$)]에 따른 증착막의 결정성에 대해 검토하였다. 증착된 3C-SiC막의 결정성은 R$_{x}$ 값이 감소할수록 더욱 향상되었으며, 형성된 결정상은 (111) 면으로 최대의 우선배향성을 가졌다. Nanoindentation 방법을 이용하여 3C-SiC막의 압입깊이에 따른 경도 및 탄성계수를 측정하였으며, 유입가스비(R$_{x}$)의 변화에 따라서 막의 경도 및 탄성계수가 뚜렷이 변화하였다.

키워드

참고문헌

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