대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

접속이온빔 리소그라피를 이용한 고굴절 비정질 박막 투과 격자 형성

Transmission Grating Formation in High Refractive-index Amorphous Thin Films Using Focused-Ion-Beam Lithography

  • 신경 (광운대 공대 전자재료공학과) ;
  • 김진우 (광운대 공대 전자재료공학과) ;
  • 박정일 (광운대 공대 전자재료공학과) ;
  • 이현용 (일본 동북대 금속재료연구소) ;
  • 이영종 (여주대 전자과) ;
  • 정홍배 (광운대 공대 전자재료공학과)
  • 발행 : 2001.01.01
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초록

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

키워드

참고문헌

  1. H. B. Chung, H. Y. Lee, 'Ga+ focused-ion-beam exposure and CF4 reactive-ion-etching development of Si3N4 resist optimized by Monte Carlo simulation,' J. of Vac. Sci. Tech. B, 16(3), pp. 1161-1166, May/Jun, 1998 https://doi.org/10.1116/1.590086
  2. S. Y. Chou, W. Y. Deng, 'Subwavelength amorphous silicon transmission gratings applications in polarizers and waveplates,' Appl. Phys. Lett. 67(6), pp. 742-744, Aug, 1995 https://doi.org/10.1063/1.115211
  3. Luciia. Cescato, Leandro L. Soares, Carlos R.A. Lima, Marco A.R.Aives, Edmundo S. Braga, 'Diffractive Optics Produced by Holography and RIE,' SPIE Vol. 2778 Optics for Science and New Technology, 1996
  4. H. Y. Lee and H. B. Chung, 'Three dimensional Monte-Carlo calculation of Ga+ ion penetration in an a-Se75Ge25 thin film,' J. Appl. Phys. 78, pp. 5975-5980, 1995 https://doi.org/10.1063/1.360601
  5. H. Y. Lee and H. B. Chung, 'Low-energy Focused-Ion-Beam exposure characteristics of a-Se75Ge25 resist,' J. Vac. Sci. Technol. B 15, 818, 1997 https://doi.org/10.1116/1.589491
  6. H. B. Chung, H. Y. Lee, 'Dry-etching development characteristics of Se75Ge25 resist for focused-ion-beam lithography,' J. of Vac. Sci. Tech. B. 16(4), pp.1987-1991, Jul/Aug, 1998 https://doi.org/10.1116/1.590118
  7. Y. Handa, T. Suhara, H. Nishihara, and J. Koyama, 'Scanning-electron-microscope-written gratings in chalcogenide films for optical integrated circuit,' Applied Optics, Vol. 18, No. 2, Jan, 1979
  8. T. Todorov, L. Nikolova, and N. Tomova, , 'A new high efficiency organic material with reversible photoinduced birefringence,' Applied Optics, Vol. 23, No. 23, pp. 4309-4312, Dec. 1984
  9. F. L. Petrotti, 'Introduction to Optics', Prentice Hall, Chap16, 323-348;chap17, 349-406, 1993