센서학회지 (Journal of Sensor Science and Technology)
- 제10권4호
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- Pages.207-213
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- 2001
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Pt/GaN Schottky Type Ultraviolet Photodetector with Mesa Structure
- 정병권 (한국전자통신연구원) ;
- 이명복 (경북대학교 전자전기공학부) ;
- 이용현 (경북대학교 전자전기공학부) ;
- 이정희 (경북대학교 전자전기공학부) ;
- 함성호 (경북대학교 전자전기공학부)
- Jung, Byung-Kwon (Electronics and Telecommunications Research Institute) ;
- Lee, Myung-Bok (School of Electronics and Electrical Eng. Kyungpook National University) ;
- Lee, Young-Hyun (School of Electronics and Electrical Eng. Kyungpook National University) ;
- Lee, Jung-Hee (School of Electronics and Electrical Eng. Kyungpook National University) ;
- Hahm, Sung-Ho (School of Electronics and Electrical Eng. Kyungpook National University)
- 발행 : 2001.07.31
초록
A Schottky type GaN ultraviolet photodetector with a mesa structure was fabricated by depositing an Al ohmic contact on an
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