Journal of Sensor Science and Technology (센서학회지)
- Volume 10 Issue 5
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- Pages.304-313
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- 2001
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Wet-etching Properties of GaAs Using $NH_4OH-H_2O_2-H_2O$ Mixed Solution and Its Application to Fabrication Method for Released GaAs Microstructures with Rectangular Cross Section
$NH_4OH-H_2O_2-H_2O$ 혼합액을 이용한 GaAS의 습식식각 특성 연구 및 이를 이용한 부유된 사각형 단면을 가지는 GaAs 미세구조물의 제작 방법
- Kim, Jong-Pal (School of Electrical Engineering and Computer Science, ASRI/ISRC/ERC-NBS, Seoul National University) ;
- Park, Sang-Jun (School of Electrical Engineering and Computer Science, ASRI/ISRC/ERC-NBS, Seoul National University) ;
- Paik, Seung-Joon (School of Electrical Engineering and Computer Science, ASRI/ISRC/ERC-NBS, Seoul National University) ;
- Kim, Se-Tae (School of Electrical Engineering and Computer Science, ASRI/ISRC/ERC-NBS, Seoul National University) ;
- Koo, Chi-Wan (School of Electrical Engineering and Computer Science, ASRI/ISRC/ERC-NBS, Seoul National University) ;
- Lee, Seung-Ki (Department of Electrical Engineering, Dankook University) ;
- Cho, dong-Il (School of Electrical Engineering and Computer Science, ASRI/ISRC/ERC-NBS, Seoul National University)
- 김종팔 (서울대학교 전기.컴퓨터공학부 ASRI/ISRC/ERC-NBS) ;
- 박상준 (서울대학교 전기.컴퓨터공학부 ASRI/ISRC/ERC-NBS) ;
- 백승준 (서울대학교 전기.컴퓨터공학부 ASRI/ISRC/ERC-NBS) ;
- 김세태 (서울대학교 전기.컴퓨터공학부 ASRI/ISRC/ERC-NBS) ;
- 구치완 (서울대학교 전기.컴퓨터공학부 ASRI/ISRC/ERC-NBS) ;
- 이승기 (단국대학교 전기공학과) ;
- 조동일 (서울대학교 전기.컴퓨터공학부 ASRI/ISRC/ERC-NBS)
- Published : 2001.09.30
Abstract
In this research, we investigate wet-etching properties of GaAs in
본 연구에서는
Keywords