Journal of Information Display
- Volume 1 Issue 1
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- Pages.25-28
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- 2000
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- 1598-0316(pISSN)
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- 2158-1606(eISSN)
In-Situ Fluorine Passivation by Excimer Laser Annealing
- Jung, Sang-Hoon (School of Electrical Engineering, Seoul National University) ;
- Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
- Jeon, Jae-Hong (School of Electrical Engineering, Seoul National University) ;
- Yoo, Juhn-Suk (School of Electrical Engineering, Seoul National University) ;
- Han, Min-Koo (School of Electrical Engineering, Seoul National University)
- Published : 2000.12.21
Abstract
We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and