Journal of the Korean Applied Science and Technology (한국응용과학기술학회지)

The Korean Society of Applied Science and Technology (한국응용과학기술학회)
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Deep UV Photoresists;Dissolution Inhibitor

  • Shim, Sang-Yeon (Department of Industrial Chemistry, Kangnung National University) ;
  • Crivello, James V. (Department of Chemistry, Rensselaer Polytechnic Institute)
  • Published : 2000.09.30
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Abstract

A new class of deep UV Photoresist based on the principles of chemical amplification was developed. This photoresist consists of three basic elements: a copolymer, blocked tetrabromobisphenol-A as a dissolution inhibitor and a photosensitive onium salt as a photoacid generator. On irradiation followed by a post exposure bake, tert-butoxycarbonyloxy phenyl group is converted to phenol group. Thus the initially base insoluble resin is converted under UV irradiation to a base soluble resin which may be preferentially removed by dissolution. This new photoresist display high sensitivity, 10 $mJ/cm^{2}$.

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