Numerical Simulation on Buffering Effects of Ultrathin p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H Interface of Amorphous Silicon Solar Cells

비정질 실리콘 태양전지의 p-a-SiC:H/i-a-Si:H 계면에 삽입된 P형 미세 결정 실리콘의 완충층 효과에 대한 수치 해석

  • Lee, Chang-Hyun (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology) ;
  • Lim, Koeng-Su (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology)
  • 이창현 (한국과학기술원 전자전산학과 전기 및 전자공학) ;
  • 임굉수 (한국과학기술원 전자전산학과 전기 및 전자공학)
  • Published : 2000.03.31

Abstract

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.

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