Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of a Depletion mode n-channel GaAs MOSFET using $Al_2O_3$ as a gate insulator

$Al_2O_3$ 절연막을 게이트 절연막으로 이용한 공핍형 n-채널 GaAs MOSFET의 제조

  • Jun, Bon-Keun (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Lee, Suk-Hyun (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronic & Electrical Engineering Kyungpook National University) ;
  • Lee, Yong-Hyun (School of Electronic & Electrical Engineering Kyungpook National University)
  • 전본근 (慶北大學校 電子電氣工學部) ;
  • 이석헌 (慶北大學校 電子電氣工學部) ;
  • 이정희 (慶北大學校 電子電氣工學部) ;
  • 이용현 (慶北大學校 電子電氣工學部)
  • Published : 2000.01.01
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Abstract

In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.

본 논문에서는 반절연성 GaAs 기판위에 $Al_2O_3$ 절연막이 제이트 절연막으로 이용된 공핍형보드 n형 채널 GaAs MOSFET(depletion mode n-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 1 ${\mu}$m의 GaAs 버퍼층, 1500 ${\AA}$의 n형 GaAs층, 500 ${\AA}$의 AlAs층, 그리고 50 ${\AA}$의 캡층을 차례로 성장시키고 습식열산화 시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 변환되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정 등을 통하여 AlAs/GaAs epilayer/S${\cdot}$I GaAs 구조의 습식열산화는 공핍형 모드 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.

Keywords

References

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