대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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$Pb(Zr_{0.9}Ti_{0.1})O_3$ 세라믹 Dynamic 초전특성에 관한 연구

Dynamic Pyroelectric Properties of The $Pb(Zr_{0.9}Ti_{0.1})O_3$ Ceramics

  • 민경진 (仁荷大學校 電子材料工學科) ;
  • 강성준 (麗水大學校 半導體 應用物理學科) ;
  • 장동훈 (仁荷大學校 電子材料工學科) ;
  • 윤영섭 (仁荷大學校 電子材料工學科)
  • Min, Kyung-Jin (Dept. of Electronic Materials & Device Engineering, Inha Univ.) ;
  • Kang, Seong-Jun (Dept. of Semiconductor and Applied Physics, Yosu National Univ.) ;
  • Chang, Dong-Hoon (Dept. of Electronic Materials & Device Engineering, Inha Univ.) ;
  • Yoon, Yung-Sup (Dept. of Electronic Materials & Device Engineering, Inha Univ.)
  • 발행 : 2000.08.01
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초록

능면체정 구조를 갖는 $Pb(Zr_{0.9}Ti_{0.1})O_3$ 세라믹을 제작한 후, dynamic 방법으로 초전특성을 측정하여 초전형 적외선 센서의 응용 가능성에 대하여 조사하였다. $Pb(Zr_{0.9}Ti_{0.1})O_3$ 세라믹의 응답 특성이 저주파와 고주파 영역에 따른 변조 주파수의 주파수 분산 (dispersion) 으로 고려되었고, 그에 따른 초전특성의 주파수 의존성을 관찰하였다. 저주파 (2~200Hz) 영역에서, 분역의 재배향(reorientation) 으로 고려되었고 그에 다른 초전특성의 주파수의 속도보다 빠르므로 분극의 변화량이 증가하여 최대값을 나타낸다. 반면에, 고주파 (200~2000Hz) 영역에서 분역의 재배향은 주파수 증가에 따라 방해를 받아 분극의 변화량이 억제되어 초전 응답이 감소하는 것을 알 수 있다. 초전계수와 재료평가지수는 각각 $1.6{\times}10^{-8}C/cm^2{\cdot},\;1.6{\times}10^{-11}C{\cdot}cm/J$이었고, 잡음등가전력과 비검출능은 각각 $2.4{\times}10^{-7}W/Hz^{1/2},\;4.17{\times}10^6cm{\cdot}Hz^{1/2}/W$이다.

Pyroelectric properties of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics having the rhombohedral structure have been studied by using the dynamic measurement method. The pyroelectric responses of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics are characterized in both low and high medulation frequency regions and their frequency depences are observed. In the low frequency region (2~200Hz), the change of polarization increases and shows the maximum since the reorientation rate of domains is higher than the modulation frequency. Inthe high frequency region (200~2000Hz), the pyroelectrci response decreases as the frequency increases, because the reorientation of domains is suppressed and so the change of polarization decreases. Pyroelectric coefficient, figure of merit, noise equivalent power and detectivity of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics are measured as $1.6{\times}10^{-8}C/cm^2{\cdot},\;1.6{\times}10^{-11}C{\cdot}cm/J,\;2.4{\times}10^{-7}W/Hz^{1/2}\;and\;4.17{\times}10^6cm{\cdot}Hz^{1/2}/W$, respectively.

키워드

참고문헌

  1. A. G. Chynoweth, 'Dynamic Method for Measuring the Pyroelectric Effect with Special Reference to Barium Titanate', J. Appl. Phys., vol. 27, pp. 78-84 (1956) https://doi.org/10.1063/1.1722201
  2. Yuhuan Xu, 'Ferroelectric Materials and Their Applications', North-Holland, Amsterdam, pp. 101-162 (1991)
  3. N. Ichinose, Y. Hirao, et. al, 'Pyroelectric Infrared Sensor Using Modified PbTiO3 and It's Applications', Jpn. J. Appl. Phys., vol. 24, (1985) Suppl. 4-3, pp. 178-180
  4. K. Yao, L. Zhang, and W. Zhu, 'Controlled Crystallization in Lead Zironate Titanate Glass-Ceramics Prepared by the Sol-Gel Process', J. Am. Ceram. Soc., vol. 81, pp. 1571-1576, (1998) https://doi.org/10.1111/j.1151-2916.1998.tb02518.x
  5. J. Huang, J. Lian, and R. C. Buchanan, 'Pyroelectric Properties of PZT (90/10) Thin Films on Pt/Si Substrate', Proceeding of the Tenth IEEE Internation Symposium on applications of Ferroelectrics, pp. 623-626, (1996)
  6. E. H. Putley, 'Semiconductors and Semimetals', Academic press New York San Francisco London, Chap. 6 pp. 259-285, (1975)
  7. W. Budde, 'Physical Detectors of Optical radiation', Academic Press New York vol. 4, pp. 94-100 (1983)
  8. G. Teowee, F. S. Mccharthy, et. al, 'Pyroelectric Properties of Sol-Gel Derived PZT Thin Films with Zr/Ti Rations', Integrated Ferroelectrics, vol. 22, pp. 431-438, (1998)
  9. R. Takayama, Y. Tomita, et. al. 'Preparation and Characteristics of Pyroelectric Infrared Sensor made of c-axis Oriented La-Modified $PbTiO_3$ Thin Films', J. Appl. Phys., pp. 411-415(1986) https://doi.org/10.1063/1.338839
  10. Henry P. Beerman, 'Pyroelectric Infrared Radiation Detector', Ceramic Bullentin, vol. 46, pp. 737-740 (1967)
  11. J. R. Choi, 'GaAs-Based Integrated Microsensors', Ph. D. Thesis, University of Minesota, (1991)