The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Quantum Mechanical Analysis for the Numerical Calculation of Two-Diemensional Electron Gas(2DEG) in Single-Heterojunction Structures

단일 이종접합 구조에서의 2차원 전자개스(2DEG)의 수치적 연산을 위한 양자역학적 분석

  • Published : 2000.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper analyzed single AlGaAs/GaAa heterojunction energy band structures by solving Schr dinger's equation and Poisson's equation self-consistently. Four different concentrations, positively ionized donors, holes in the valence band, free electrons in the conduction band and 2DEG are taken into account for the whole system. 2DEG from both of the structures are obtained and compared with the date available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained to prove the validity of the single AlGaAs/GaAs system. Finally, theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study. It has only an error of les than 10 percent.

Keywords

References

  1. L. Esaki, R. Tsu, 'Superlattice and negative conductivity in semiconductors', IBM Research Center, Internal Report no.RC2418, March 1969
  2. R. Dingle, H. L. Stomer, A. C. Gossard, W. Wiegmann, 'Electron mobilities in modulation-doped semiconductor heterojunction superlattices', Applied Physics Letter, vol. 33, pp. 665-667, October 1978 https://doi.org/10.1063/1.90457
  3. T. Mimura, S. Hiyamizu, T. Fujii, Nanbu, 'A new field-effect transistor with selectively doped GaAs/n-AlGaAs heterojunction', Japanese Journal of Applied Physics. Vol. 19, pp. L225-L227, May 1980 https://doi.org/10.1143/JJAP.19.L225
  4. N.H. Sheng, C. P. Lee, R. T. Chen, D. L. Miller, 'GaAs/AlGaAs double heterostructure high electron mobility transistors', IEEE International Electron Device Meeting Conference, pp352-355, 1984
  5. P. C. Chow, 'Computer Solution to the schrodinger Equation', Journal of Applied physics, vol. 40, pp. 730-734, May 1972
  6. R. Anholt, Electrical and thermal Characterization of MESFETs, HEMTs, and HBTS, Artech House, 1995
  7. H. Ahn, M. El-Nokali, 'An Analytical Model for High Electron Mobility Transistors', IEEE Transactions on Electro Devices, vol. 41, no. 6, pp. 874-878, June 1994 https://doi.org/10.1109/16.293295