Journal of Korean Vacuum Science & Technology
- 제4권3호
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- Pages.73-77
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- 2000
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- 1226-6167(pISSN)
Phosphorus doping in silicon thin films using a two - zone diffusion method
- Hwang, M.W. (School of Materials Science and Engineering, and Inter-University Seciconductor Research Center(ISRC), Seoul National University) ;
- Um, M.Y. (School of Materials Science and Engineering, and Inter-University Seciconductor Research Center(ISRC), Seoul National University) ;
- Kim, Y.H. (School of Materials Science and Engineering, and Inter-University Seciconductor Research Center(ISRC), Seoul National University) ;
- Lee, S.K. (School of Materials Science and Engineering, and Inter-University Seciconductor Research Center(ISRC), Seoul National University) ;
- Kim, H.J. (School of Materials Science and Engineering, and Inter-University Seciconductor Research Center(ISRC), Seoul National University) ;
- Park, W.Y. (Semiconductor R&D Center, Samsung Electronics Co., LTD)
- 발행 : 2000.10.01
초록
Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750
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