Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 33 Issue 4
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- Pages.217-221
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- 2000
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Dielectric Constant with $SiO_2$ thickness in Polycrystalline Si/ $SiO_2$ II Si structure
다결정 Si/ $SiO_2$ II Si 적층구조에서 $SiO_2$ ∥ 층의 두께에 따른 유전특성의 변화
Abstract
The gate oxide thickness is becoming thinner and thinner in order to speed up the semiconductor CMOS devices. We have investigated very thin
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