한국표면공학회지 (Journal of Surface Science and Engineering)
- 제33권2호
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- Pages.87-92
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- 2000
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
SnO$_2$ 박막의 전기적 특성에 미치는 불소 doping및 열처리 효과
Effect of fluorine doping and heat treatment for SnO$_2$ thin films on electrical properties
초록
Transparent and electrical conducting tin oxide thin films were fabricated on soda lime silicate glass by thermal chemical vapour deposition technique. Thin films were deposition from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant and 1,1,1,2-tetrafluoroethane as a doping material. Electrical properties of fabricated tin oxide films were changed depending on substrate temperature, and the amount of dopant. Resistivity of tin oxide films was reduced by doping fluorine or heat treatment. Thin films can be optimized at TMT flow rate of 8sccm, oxygen flow rate of 150sccm, 1,1,1,2-tetrafluoroethane floe rate of 300sccm and substrate temperature
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