Embedded Inductors in MCM-D for RF Appliction

RF용 MCM-D 기판 내장형 인덕터

We developed embedded inductors in MCM-D substrate for RF applications. The increasing demand for high density packaging was the driving forces to the development of MCM-D technology. Most of these development efforts have been focused on high performance digital circuits. However, recently there is a great need fur mixed mode circuits with a combination of digital, analog and microwave devices. Mixed mode modules often have a large number of passive components that are connected to a small number of active devices. Integration of passive components into the high density MCM substrate becomes desirable to further reduce cost, size, and weight of electronic systems while improving their performance and reliability. The proposed MCM-D substrate was based on Cu/photosensitive BCB multilayer and Ti/Cu is used to form the interconnect layer. Seed metal was formed with 1000 $\AA$ Ti/3000 $\AA$ Cu by sputtering method and main metal was formed with 3 $\mu\textrm{m}$ Cu by electrical plating method. The multi-turn sprial inductors were designed in coplanar fashion. This paper describe the manufacturing process of integrated inductors in MCM-D substrate and the results of electrical performance test.

RF(radio Frequency)용 MCM(Multichip Module)-D 기판 내장형 인덕터를 개발하였다. MCM 기술은 고밀도 패키징 기술로서 주로 디지털회로에 많이 적용되어 왔으나, 최근에는 아날로그회로 및 디지털회로가 혼재된 혼성신호 및 초고주파 회로에도 적용되고 있다. 혼성신호에서는 능동소자 주변에 많은 수의 수동소자가 연결되므로 MCM-D 기판에 수동소자를 내장시키면 원가절감과 시스템의 크기 축소 및 경량화를 이를 수 있을 뿐 아니라, 성능과 신뢰성을 향상시킬 수 있다. 본 논문에서 MCM-D 기판은 Cu/감광성 BCB(Benzocyclobutene)를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/Cu를 각각 1000 $\AA$/3000 $\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 $\mu\textrm{m}$ Cu를 형성하였으며, 인덕터는 coplanar구조로 하여 기존의 반도체 공정을 이용하여 MCM-D기판에 인덕터를 안정적으로 내장시키고 전기적 특성을 측정하였다.