한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제13권7호
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  • Pages.551-556
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  • 2000
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Si이 첨가된 $In_{0.1}Ga_{0.9}As$ 에피층의 Sit셀 온도에 따른 표면특성 연구

Surface characteristics of Si-doped $In_{0.1}Ga_{0.9}As$ epilayers due to Si-cell temperature

  • 발행 : 2000.07.01
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초록

We have investigated the effect of surface In composition with Si cell temperature on the In$_{0.1}$/Ga$_{0.9}$/As epilayers grown on GaAs substrates. The epilayers were grown by molecular beam epitaxy(MBE) method and were characterized by the pthotoreflectance(PR) measurements. The E$_{o}$ bandgap energies of In$_{0.1}$/Ga$_{0.9}$/As epilayers were observed at around 1.28 eV at room temperature, and the additional shoulder peaks appeared at the higher energies than E$_{o}$ with increase of Si doping concentrations. The intensity of the additional shoulder peak was decreased with lowering the measurement temperature and the peak disappeared with the increase of surface etching time. This results hows that In composition at surface of InGaAs epilayer is decreased with the increase of the doping cell temperature. We consider that the reason of the decrease of In composition at the surface should be due to In re-evaporation from the surface by radiation heat of Si doping cell.ell.ell.ell.

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참고문헌

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