Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Surface characteristics of Si-doped $In_{0.1}Ga_{0.9}As$ epilayers due to Si-cell temperature

Si이 첨가된 $In_{0.1}Ga_{0.9}As$ 에피층의 Sit셀 온도에 따른 표면특성 연구

  • Published : 2000.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the effect of surface In composition with Si cell temperature on the In$_{0.1}$/Ga$_{0.9}$/As epilayers grown on GaAs substrates. The epilayers were grown by molecular beam epitaxy(MBE) method and were characterized by the pthotoreflectance(PR) measurements. The E$_{o}$ bandgap energies of In$_{0.1}$/Ga$_{0.9}$/As epilayers were observed at around 1.28 eV at room temperature, and the additional shoulder peaks appeared at the higher energies than E$_{o}$ with increase of Si doping concentrations. The intensity of the additional shoulder peak was decreased with lowering the measurement temperature and the peak disappeared with the increase of surface etching time. This results hows that In composition at surface of InGaAs epilayer is decreased with the increase of the doping cell temperature. We consider that the reason of the decrease of In composition at the surface should be due to In re-evaporation from the surface by radiation heat of Si doping cell.ell.ell.ell.

Keywords

References

  1. J. Appl. Phys. v.77 no.9 Spectroscopic studies of the effects of two-dimensional electron gas on interband transitions Wei Liu;Desheng Jinag;Yaohui Zhang
  2. J. Appl. Phys. v.76 no.11 Temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor $Al_xGa_{1-x}As/In_yGa{1-y}As/GaAs$ structures P. W. Yu;B. Jogai
  3. Appl. Phys, Lett v.59 no.21 Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero-filed-effect transistor structures by photpluminescence H. Brugger;H. Mussig;C. Wolk
  4. J. Crystal Growth v.150 Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy A. Boscchi;F. Colonna;S. Franchi;P. Pascarella;P. Allegri
  5. Appl. Phys. Lett. v.61 no.5 Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs guantum wells K. Muraki;S. Fukatsu;Y. Shiraki
  6. Appl. Phys. Lett. v.67 no.6 Improved compositional abruptness at eht InGaAs on GaAs interface by presaturation with In during molecular-beam epitaxy R. Kaspi;K. R. Evans
  7. J. Appl. Phys. v.78 no.3 Observation of quantum confined Stark effect in $In_xGa_{1-x}As/GaAs$ single-quantum well by photo-reflectance spectroscopy D. P. Wang;C. T. Chen
  8. Phys. Rev. v.B10 Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillations D. E. Aspnes
  9. J. Appl. Phys. v.62 Noncontact doping level determination in GaAs using photoreflectance spectroscopy L. Peters;L. Phaneuf;L. W. Kapitan;W. M. Theis
  10. Appl. Phys. Lett. v.59 Carrier concentraion determination by photoreflectance at E₁ in thin film highly doped GaAs Ali Badakhshan;R. Glosser;K. Alavi
  11. Phys. Rev. v.B38 Photoreflectance study of narrow-well strained-layer $In_xGa_{1-x}As/GaAs$ coupled multiple-quantum-well structures S. H. Pan;H. Shen;Z. Hang;F. H. Pollak