The Influence ${Sb_2}{O_3)$ Addition on Humidity Sensing Properties of $SnO_2$Thick Film Devices

${Sb_2}{O_3)$ 의 첨가가 $SnO_2$후막의 감습 특성에 미치는 영향

  • 김종택 (인하대학교 전기공학과) ;
  • 이덕출 (인하대학교 전기공학과) ;
  • 김철수 (전자부품연구원 전자소자연구센터)
  • Published : 2000.04.01

Abstract

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

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References

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