대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

기판온도에 따른 (Ba,Sr)TiO$_3$ 박막의 구조와 유전특성

The Structure and Dielectric Properties of the (Ba,Sr)TiO$_3$ Thin Films with the Substrate Temperature

  • 이상철 (광운대 전자재료공학과) ;
  • 이문기 (광운대 전자재료공학과) ;
  • 이영희 (광운대 전자재료공학과)
  • 발행 : 2000.11.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

키워드

참고문헌

  1. A. F. Tasch Jr and L. H. Parker, 'Memory Cell, and Technology Issues for 64- and 256-Mbot One-Transistor Cell MOS DRAMs', Proceedings of IEEE, Vol. 77, No. 3, 1989
  2. W. P. Noble et al., 'Fundamental Limitations on DRAM Storage Capacitors', IEEE Circuit and Devices Magazine, pp. 45-51
  3. M.A zuma et al., 'Electrical characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics', Proc. 4th ISIF, pp. 109-117, 1992
  4. L. Baginsky and E. G. Kostov, 'Information Writing Mechanism in Thin Film MFIS-Structures, Ferroelectrics', pp. 239-250, 1993
  5. M. Azuma et al., 'Electrical characteristics of High Dielectric Constant Materials for Integrated Ferroelectrics', Proc 4th ISIF, pp. January, 1985
  6. L. Bagginsky and E. G. Kostov, 'Information Writing Mechanism in Thin Film MFIS-Structures', Ferroelectrics, Vol. 143, pp. 109-117, 1992
  7. Yoichi Miyasaka, 'High Dielectric (Ba,Sr)$TiO_3$ Thin Films for ULSI DRAM Application', Extended Abstracts of 1995 International Conference on Solid State Device and Materials, Osaka, pp. 506-506, 1995
  8. L. Baginsky and E. G. Kostov, 'Information Writing Mechanism in Thin Film MFIS- Structures', Ferroelectrics, Vol.143, pp. 239-250, 1993