참고문헌
- High-Speed Semiconductor Devices Heterostructure Field-Effect Transistors S. J. Pearton;N. J. Shah;S.M. Sze(ed.)
- HEMTs and HBTs: Devices Fabrication, and Circuits HEMT Devices and Circuit Applications P. C. Chao;A. Swanson;A. Brown;U. Mishra;F. Ali;C. Yuen;F. Ali;A. Gupta(ed.)
- High-Speed Semiconductor Devices Biplor Transistors P. M. Asbeck;S.M. Sze(ed.)
- IEDM Technical Digest 30-nm gate InAIAs/InGaAs HEMT's lattice-matched to InP substrates T. Suemitsu(et al.)
- International Mocrowave Symposium Digest A Monolithic W-Band HEMT VCO with Feedback Topology H. J. Siweris;H. Tischer;T. Grave;W, Kellner
- J. Vac. Sci. and Technon v.12 Defects Associated with the Accommodation of Misfit between Crystals J. W. Mathew
- 11th International Conference on Indium Phosphide and Related Materials Composite-Channel InP HEMT for W-Band Power Amplifiers Y. C. Chen(et al.)
- Ultrafast Electronics and Optoelectronics Conference Submillimeter wave InP-based HEMTs with fmax over 600 GHz M. Matloubian(et al.)
- 11th International Conference on Indium Phosphide and Related Materials A 3-channel InP-HEMT with low output conductance H. Maher;J. Decobert;A. Falcou;G. Post;A. Scavennec
- IEEE Trans. Electron Devices v.45 no.1 Design and Fabrication of Double Modulation Doped InAlAs.InGaAs/InAs Heterojunction FET'S for High-Speed and Millimeter-Wave Applications D. Xu;H. G. Heis;S. A. Kraus;M. Sexl;G. Bohm;G. Trankle;G. Weimann;G. Abstreiter
- 11th International Conference on Indium Phosphide and Related Materials Composite-Channel InP HEMT for W-Band Power Amplifiers Y. C. Chen(et al.)
- High Performance D-Band(118GHz) Monolythic Low Noise Amplifier M. Nishimoto(et al.)
- Advances in Millimeter-wave FET MMIC Techonology M. Matloubian
- A 427mW, 20% Compact W-Band InP HEMT MMIC Power Amplifier D. L. Ingram(et al.)
- IEEE GaAs IC Symposium Digest A High-Gain Monolithic D-Band InP HEMT Amplifier C. Pobanz(et al.)
- IEEE Trans. Microwave Theory and Tech. v.43 no.4 155GHz and 213 GHz AlInAs/GaInAs/InP HEMT MMIC Oscillators S. E. Rosenbaum(et al.)
- IEEE Trans. Microwave Theory and Tech. v.46 no.12 112-GHz, 157 GHz, and 180 GHz InP HEMT traveling-wave amplifiers B. Agarwal(et al.)
- Proc. 25th European Microw. Conf SCFL static frequency divider using InAIAs/InGaAs/InP HEMTs Y. Umeda(et al.)
- IEEE Trans. Microwave Theory and Tech. v.46 no.9 Over-60-GHz Design Technology for and SCFL Dynamic Frequency Divider Using InP-Based HEMT'S Y. Umeda;K. Osafune;T. Enoki;H. Yokoyama;Y. Ishii;Y. Imanura
- 1997 IEEE GaAs IC Symp. Tech. Dig An 80-Gbit/s multiplexer IC using InAIAs/InGaAs/InP HEMTs T. Otsuji(et al.)
- High Breakdown Voltage InAIGaAs/In0.32Ga0.68As Metamorphic HEMT for Microwave and mm-wave Power Applications C. S. Whelan(et al.)
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IEDM Techical Digest
Metamorphic
$In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ HEMTs on GaAs Substrate with$f_T$ over 200 GHz D. C. Dumka;W. E. Hoke;P. J. Lemonias;G. Cueva;I. Adesida - IEEE Electron Device Lett. v.11 W-band low-nois InAlAs/InGaAs lattice mateched HEMTs's P. C. Chao;A. Tessmer;K. H. G. Duh;M. Y. Kao;P. Ho;P. M. Smith;J. M. Ballingall;S. M. Liu;A. A. Jabra
- IEDM Technical Digest v.30 no.3 Novel InP/InGaAs DHBTs with selective multisteps MOCVD regrowth techniques for high-speed application T. Nomura(et al.)
- 11th International Conference on Indium Phosphide and Related Materials Transferred-Substrate Heterojunction Biplor Transistor Integrated Circuit Technology M. Rodwell(et al.)
- IEDM Technical Digest v.30 no.2 A 50 GHz Feedback Amplifier with AlInAs/GaInAs Transferred-Substrate HBT B.Agarwal(et al.)
- IEDM Technical Digest v.30 no.1 InGaP/GaAs HBT'S with High-Speed and Low-Current Operation Fabricated Using WSi/Ti as the Base Electrode and Burying Si02 in the Extrinsic Collector Tohru Oka(et al.)
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IEDM Tech. Digest
130-GHz
$f_T$ SiGe HBT Technology K. Oda;E. Ohue;M. Tanabe;H. Shimamoto;T. Onai;K. Washio - IEDM Tech. Digest A 0.2-㎛ Self-Aligned SiGe HBT Featuring 107-GHz fmax and 6.7-ps ECL K. Washio;M. Kondo;E. Ohue;K. Oda;R. Hayami;M. Tanabe;H. Shimamoto;T. Harada
- W-band InGaP/GaAs HBT MMIC Frequency Sources M. S. Heins;T. Juneja;J. A Fendrich;J. Mu;D. Scott;Q. Yang;M. Hattendorf;G. E. Stillman;M. Feng
- Future Technologies for Commercial and Defense Telecommunication Electronics A. K. Oki(et al.)
- 11th International Conference on Indium Phosphide and Related Materials Optimizing InP HBT-Technology for 50 GHz Clock-rate MSI Circuits Sokolich(et al.)
- Optimal Design and Experimental Characterization of High-Gain GaInP/GaAs HBT Distributed Amplifiers S. Mohammadi(et al.)
- 11th International Conference on Indium Phosphide and Related Materials Design and Characterization of a 50 GHz InP/InGaAs HBT amplifer A. Huber(et al.)
- 24-17 GHz dielectrically stabilized oscillators with excellent phase noise properties utilizing InP/InGaAs HBTs U. Gutich(et al.)
- IEEE Microwave Guided Wave Lett. v.6 A Q-band monolithic linear amplifier using AlGaAs/GaAs HBT'S Y, Kown;W.-J. Ho;J. A. Higgins
- IEEE Trans. Microwave Theory and Tech. v.46 no.12 A 44-GHz High IP3 InP-HBT Amplifier with Practical Current Reuse Biasing K. Kobayashi;M. Nishimoto;L. T. Tran;H. Wang;J. C. Cowles;T. R. Block;J. H. Elliott;B. R. Allen;A. K. Oki;D. C. Streit
- K. Chu;B. Green;L. F. Eastman