한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제13권1호
  • /
  • Pages.6-12
  • /
  • 2000
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

자장 강화 반응성 이온 식각 장비를 이용한 몰리브덴 박막의 식각 특성 연구

A Study on Etching Characteristics of Molybdenum Thin Films by Magnetically Enhanced Reactive lon Etching System

  • 김남훈 (중앙대학교 전자전기공학부) ;
  • 권광호 (한서대학교 전자공하고가) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • 발행 : 2000.01.01
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초록

In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.

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참고문헌

  1. Silicides for VLSI Applications S. P. Murarka
  2. J. Appl. Phys. v.71 no.2 Modeling of agglomeration in polycrystalline thin films : Application to TiSi₂on a silicon substrate T. P. Nolan;R. Sinclair;R. Beyers
  3. Metallization;Theory and Practice for VLSI and ULSI S. P. Murarka
  4. Jpn. J. Appl. Phys. v.34 no.2B Novel oxygen free titanium silicidation(OFS) processing for low resistance and thermally stable SALICIDE(self-aligned silicide) in deep submicron dual gate CMOS(complementary metal-oxide semiconductors) H. Kotaki;M. Nakano;S. Hayashida;S. Kakimoto;K. Mitsuhashi;J. Takagi
  5. IEDM A novel salicide process(SEDAM) for sub-quarter micron CMOS devices T. Mogami;H. Wakabayashi;Y. Saito;T. Tatsumi; T. Kunio
  6. VLSI Science and Technology-1985 H. Oikawa;T. Amazawa;W. M. Bullis(ed.);S. Broydo(ed.)
  7. IEEE Trans. on Electron Devices v.ED-30 no.6 Mo₂N/Mo gate MOSFET's M. J. Kim;D. M. Brown
  8. J. Appl. Phys. v.51 no.11 Silane silicidation of Mo thin films T. P. Chow;D. M. Brown;A. J. Steckl;M. Garfinkel
  9. Journal of Materials Science Letters v.17 Sulphur role during Mo etching using $SF_6$ and Cl₂gas chemistries Chang-Il Kim(et al.)