대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

이중 Gate를 갖는 Trench Emitter IGBT의 특성

The Characteristics of a Dual gate Trench Emitter IGBT

  • 강영수 (아주대 대학원 전자공학과) ;
  • 정상구 (아주대 공대 전자공학과)
  • 발행 : 2000.09.01
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⟨ 이전 논문 다음 논문 ⟩

초록

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

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참고문헌

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