대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각에서 공정변수가 저항성 접촉 형성에 미치는 영향

The Effects of Etch Process Parameters on the Ohmic Contact Formation in the Plasma Etching of GaN using Planar Inductively Coupled $CH_4/H_2/Ar$ Plasma

  • 김문영 (慶北大 電子電氣工學部 大學院) ;
  • 태흥식 (慶北大 電子電氣工學部) ;
  • 이호준 (威德大 電子電氣工學部) ;
  • 이용현 (慶北大 電子電氣工學部) ;
  • 이정희 (慶北大 電子電氣工學部) ;
  • 백영식 (경북대 전자전기공학부)
  • Kim, Mun-Yeong ;
  • Tae, Heung-Sik (Dept.of Electronics Electrical Engineering, Kyungpook National University) ;
  • Lee, Ho-Jun (Uiduk University) ;
  • Lee, Yong-Hyeon ( Dept.of Electronics Electrical Engineering, Engineering College, Kyungpook National University) ;
  • Lee, Jeong-Hui ( Dept.of Electronics Electrical Engineering, Engineering College, Kyungpook National University) ;
  • Baek, Yeong-Sik ( Dept.of Electronics Electrical Engineering, Engineering College, Kyungpook National University)
  • 발행 : 2000.08.01
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초록

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

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참고문헌

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